Publications （研究業績）

1

SiC epitaxial reactor cleaning by ClF3 gas with the help of reaction heat, Keisuke Kurashima, Masaya Hayashi, Hitoshi Habuka, Hideki Ito, Sin-Ichi Mitani, Yoshinao Takahashi, IP-01 (Invited Poster), International Conference on Silicon Carbide and Related Materials 2019, (Sep. 29 - Oct. 4, 2019, Kyoto, Japan).

2

Etching rate profile of C-face 4H-SiC wafer depending on total gas flow rate of chlorine trifluoride and nitrogen, Kenta Irikura, Ryohei Kawasaki,Hitoshi Habuka, Yoshinao Takahashi, Tomohisa Kato, TU-P-10, International Conference on Silicon Carbide and Related Materials 2019, (Sep. 29 - Oct. 4, 2019, Kyoto, Japan).

3

Non-plasma dry etcher design for 200 mm-diameter silicon carbide wafer, Ryohei Kawasaki, Kenta Irikura, Histoshi Habuka, Yoshinao Takahashi, Tomohisa Kato, WE-P-07, International Conference on Silicon Carbide and Related Materials 2019, (Sep. 29 - Oct. 4, 2019, Kyoto, Japan).

4

Chemical behaviour of byproduct layer in exhaust tube formed by silicon carbide epitaxial growth in a system using chlorides, Ichiro Mizushima, Hitoshi Habuka, WE-P-06, International Conference on Silicon Carbide and Related Materials 2019, (Sep. 29 - Oct. 4, 2019, Kyoto, Japan).

5

Development of SiC etching by chlorine monofluoride gas, Yoshinao Takahashi, Korehito Kato and Hitoshi Habuka, We-P-3, International Conference on Silicon Carbide and Related Materials 2019, (Sep. 29 - Oct. 4, 2019, Kyoto, Japan).

6

Boron trichloride gas behaviour for chemical vapour deposition and etching at silicon surface, Mitsuko Muroi, Ayumi Saito and Hitoshi Habuka, 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19), 10:45 - 11:00 on July 30, Novel Materials and Processes, 28 July - 2 August, 2019. Keystone, Colorado, USA.

7

Chlorosilane gas transport real-time monitoring using quartz crystal microbalance set at an exhaust of slim vertical cold wall chemical vapour deposition reactor, T. Takahashi, M. Muroi, K. Irikura, M. Matsuo, A. Yamada, H. Habuka, Y. Ishida, S. Ikeda and S. Hara, EuroCVD22 BalticALD16, Poster No. 6 0n June 25 2019, Luxembourg, June 24-28, 2019.

8

High Temperature SiC Reactor Cleaning Using Chlorine Trifluoride Gas Achieved by Purified Pyrolytic Carbon Coating Film, Keisuke Kurashima, Kohei Shioda, Hitoshi Habuka, Hideki Ito, Shin-ichi Mitani, Yoshinao Takahashi, European Conference on Silicon Carbide and Related Materials (ECSCRM) 2018, MO.P.EP1 (Sep. 2-6, 2018, Birmingham, UK).

9

Chlorine trifluoride gas distributor design for single-crystalline C-face 4H-silicon carbide wafer etcher, Keisuke Kurashima, Ryohei Kawasaki, Kenta Irikura, Shogo Okuyama, Hitoshi Habuka, Yosinao Takahashi, Tomohisa Kato, European Conference on Silicon Carbide and Related Materials (ECSCRM) 2018, WE.P.CO1 (Sep. 2-6, 2018, Birmingham, UK).

10

Silicon epitaxial growth rate accelerated by parallel langmuir processes, Ayami Yamada, Toru Watanabe, Ayumi Saito, Ayumi Sakurai and Hitoshi Habuka, The first joint conference of international SiGe technology and device meeting (ISTDM) and international conference on silicon epitaxy and heterostructures (ICSI), pp. 109-110 (May27 - 31, 2018, Potsdam, Germany). .

11

Quick and Practical Cleaning Process for Silicon Carbide Epitaxial Reactor, Kohei Shioda, Keisuke Kurashima, Hitoshi Habuka, Hideki Ito, Shinichi Mitani, Yoshinao Takahashi, 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM), MO.AP.11, September 17-22, 2017, Washington DC, USA.

12

4H-Silicon Carbide Wafer Surface after Chlorine Trifluoride Gas Etching, Shogo Okuyama, Keisuke Kurashima, Ken Nakagomi, Hitoshi Habuka, Yoshinao Takahashi, and Tomohisa Kato, 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM), TU.CP.4, September 17-22, 2017, Washington DC, USA.

13

Slim vertical chemical vapour deposition reactor utilizing natural convection for Minimal Manufacturing, Miya Matsuo, Ayami Yamada, Ning Li, Hitoshi Habuka, Yuuki Ishida, Shin-ichi Ikeda and Shiro Hara, Joint EuroCVD-BalticALD 2017, #28002, June 11-14, 2017, Linkoping, Sweden.

14

Silicon epitaxial growth rate increased by adding SiHx to a SiHCl3-H2 system, Toru Watanabe, Ayami Yamada, Ayumi Saito, Ayumi Sakurai, Hitoshi Habuka, Joint EuroCVD-BalticALD 2017, #28003, June 11-14, 2017, Linkoping, Seden.

15

Thermal Process Optimization by Reflector Design for Minimal Manufacturing CVD Reactor, Ning Li, Ayami Yamada, Miya Matsuo, Hitoshi Habuka, Yuuki Ishida, Shin-ichi Ikeda and Shiro Hara, The 7th International Symposium on Advanced Science and Technology of Silicon Materials, F-04, P.70-73, (JSPS Si Symposium), Nov. 21-25, 2016, Kona, Hawaii, USA

16

Susceptor Coating Materials Applicable for SiC Reactor Cleaning, K. Shioda, H. Habuka, Y. Takahashi, 11th European Conference on Silicon Carbide and Related Materials (ECSCRM 2016), TuP.45, (Halkidiki, Greece, 25-29 September 2016) .

17

A Method to Adjust Silicon Carbide Etching Rate Profile by Chlorine Trifluoride Gas, K. Nakagomi, S. Okuyama, D. Yajima, H. Habuka, T. Kato, 11th European Conference on Silicon Carbide and Related Materials (ECSCRM 2016), MoP.14, (Halkidiki, Greece, 25-29 September 2016).

18

Transport Phenomena in a Slim Vertical CVD Reactor for Minimal Manufacturing, A. Yamada, N. Li, M. Matsuo, H. Habuka, Y. Ishida, S. Ikeda and S. Hara, The 18th International Conference on Crystal Growth and Epitaxy, MoP-G04-2, Refereed, Poster, Aug. 7-12, 2016 (Nagoya, Japan).

19

Increase in Silicon Film Deposition Rate in a SiHCl3-SiHx-H2 System, A. Saito, A. Yamada, A. Sakurai and H. Habuka, The 18th International Conference on Crystal Growth and Epitaxy, Mo1-G04-4, Refereed, Oral Aug. 7-12, 2016 (Nagoya, Japan).

20

Material Evaluation and Development Support Project for High Current SiC Power Module, Tomohiro Iguchi, Akio Takahashi and Hitoshi Habuka, 28th International Symposium on Power Semiconductor Devices and Ics (ISPSD), A4P-E (June 13, 2016, Prague, Czech Republic).

21

In Situ cleaning process of silicon carbide epitaxial reactor for removing film-type deposition formed on susceptor, Kosuke Mizuno, Hitoshi Habuka, Yuuki Ishida, Toshiyuki Ohno, International Conference on Silicon Carbide and Related Materials 2015, Tu-P-11, (Oct. 4-10, 2015, Naxos, Italy)

22

Etching rate behavior of 4H-silicon carbide epitaxial film using chlorine trifluoride gas, Asumi Hirooka, Hitoshi Habuka, Tomohisa Kato, International Conference on Silicon Carbide and Related Materials 2015, Mo-P-15 (Oct. 4-10, 2015, Naxos, Italy)

23

Numerical evaluation of silicon epitaxial growth for 450mm O substrate, Misako Matsui and Hitoshi Habuka, EuroCVD20, P1.23 (July, 13-17, 2015)(Sempach, Switzerland)

24

In-situ observation of chemical vapor deposition using SiHCl3 and BCl3 Gases, Ayumi Saito, Kento Miyazaki, Misako Matsui, and Hitoshi Habukaa, EuroCVD20, 17:10 on July 14, (July, 13-17, 2015)(Sempach, Switzerland)

25

Atmospheric Pressure Chemical Vapor Deposition Observed by Langasite Crystal Microbalance, Hitoshi Habuka, BIT's 4th Annual World Congress of Advanced Materials-2015 (May 27-29, 2015, Chongqing, China) Sector 2-5: Semiconductors and Superconductors ( Part 1), 14:45-15:10, May 28 (2015), Abstract p. 140.

26

Practical Thermal Condition of Silicon CVD Reactor for Minimal Manufacturing, Ning Li, Hitoshi Habuka, Shin-Ichi Ikeda, Yuuki Ishida and Shiro Hara, 2004 International Conference on Materials Science and Energy Engineering, Sanya, Hainan, China, (Dec. 12-14, 2014).. Industrial Engineering, Machine Design and Automation (IEMDA 2014) & Computer Science and Application (CCSA 2014): pp. 393-400. doi: 10.1142/9789814689007_0054

27

In-Situ Observation of Chemical vapor deposition Using Langasite Crystal Microbalance, Hitoshi Habuka, Collaborative Conference on Crystal Growth 3CG 2014, (Abstract p.36) A16,(Invited), (Phuket, Thailand, Nov. 3-7, 2014).

28

Practical Thermal Condition of Silicon CVD Reactor for Minimal Manufacturing, Ning Li, Hitoshi Habuka, Shin-Ichi Ikeda, Yuuki Ishida and Shiro Hara, Proceedings of the Forum on the Science and Technology of Silicon Materials 2014 (Hamamatsu), pp. 219-221, (PT10-1), Hamamatsu Japan, (Oct 19-22, 2014).

29

Chlorine Trifluoride Gas Transport and Etching Rate Distribution in Silicon Carbide Dry Etcher, Dairi Yajima, Ken Nakagomi, Hitoshi Habuka and Tomohisa Kato, 10th European Conference on Silicon Carbide and Related Materials - ECSCRM 2014, MO-P-42, (Sep. 21-25, 2014. Grenoble, France)

30

Cleaning Process for Silicon Carbide Chemical Vapor Deposition Reactor, Hitoshi Habuka, Yusuke Fukumoto, Kosuke Mizuno, Yuuki Ishida, Toshiyuki Ohno, 10th European Conference on Silicon Carbide and Related Materials - ECSCRM 2014, WE2-OR-05, (Sep. 21-25, 2014. Grenoble, France)

31

Langasite Crystal Microbalance for In-Situ Monitor of Chemical Vapor Deposition, Hitoshi HABUKA, IUMRS-ICA2014, D4-I26-005 (Invited) Aug. 24-28, 2014 ,(Fukuoka, Japan)

32

C-face (0001) 4H-SiC Surface Morphology Produced by Etching Using ClF3 Gas , Hitoshi Habuka, Yusuke Fukumoto, Kosuke Mizuno and Tomohisa Kato 56th Electronic Materials Conference, S5, June 25-27, 2014, University of California Santa Barbara, Santa Barbara, CA, USA.

33

Precipitates Caused in Silicon Wafers by Prolonged High-Temperature Annealing in Nitrogen Atmosphere, Haruo Nakazawa, Masaaki Ogino, Hideaki Teranishi, Yoshikazu Takahashi, and Hitoshi Habuka, 2013 JSAP-MRS Joint Symposia proceedings (MRS Online Proceedings Library) (2014).

34

Numerical Calculation Model of Single Wafer Wet Etcher Using Swinging Nozzle, Hitoshi Habuka, Shintaro Ohashi, Kosuke Mizuno, and Tetsuo Kinoshita, Semiconductor Cleaning Science and Technology 13 (SCST 13), (San Francisco, CA, USA, Oct. 28, 2013), ECS Trans. 58(6): 39-46 (2013); doi:10.1149/05806.0039ecst.

35

Development of Silicon Carbide Dry Etcher Using Chlorine Trifluoride Gas, D. Yajima, H. Habuka, and T. Kato, International Conference on Silicon Carbide and Related Materials (Miyazaki, Japan. Sep. 29-Oct. 4, 2013),Tu-P-30.

36

Off-Orientation Influence on C-Face (0001) 4H-SiC Surface Morphology Produced by Etching Using Chlorine Trifluoride Gas, Y. Fukumoto, H. Habuka, and T. Kato, International Conference on Silicon Carbide and Related Materials (Miyazaki, Japan. Sep. 29-Oct. 4, 2013), Th-P-28.

37

Silicon chemical vapor deposition process using a half-inch silicon wafer for minimal manufacturing system, Ning Li, Hitoshi Habuka, Shin-ichi Ikeda and Shiro Hara", EuroCVD19, Sep. 1-6, 2013, Varna, Bulgaria.

38

Langasite crystal microbalance frequency behavior over wide gas phase conditions for chemical vapor deposition, Hitoshi Habuka and Misako Matsui, EuroCVD19, Sep. 1-6, 2013, Varna, Bulgaria.

39

Crystalline Defects in Silicon Wafer caused by Nitrogen Annealing, Haruo Nakazawa, Masaaki Ogino, Hideaki Teranishi, Yoshikazu Takahashi, Hitoshi Habuka, The 9th World Congress of Chemical Engineering (WEEC9), Tup-T3-184, pp. 616, Aug. 20 (Tue), 2013, Aug. 18-23 (2013), Coex, Seoul, Korea.

40

Low Temperature Amorphous Silicon Carbide Thin Film Formation Process on Aluminum Surface Using Monomethylsilane Gas and Trichlorosilane Gas , H. Habuka, M. Tsuji and A. Hirooka, 17th International Conference of Crystal Growth and Epitaxy, Proceedings pp. 283-286, Aug. 11-16, 2013, Univ. Warsaw, Warsaw, Poland.

41

Method for Determining Chemical Vapor Deposition Occurrence Using Langasite Crystal Microbalance, Hitoshi Habuka, Misako Matsui and Ayumi Saito, 17th International Conference of Crystal Growth and Epitaxy, Proceedings pp. 182-186, Aug. 11-16, 2013, Univ. Warsaw, Warsaw, Poland.

42

Crystalline Defects in Silicon Wafer Caused by Prolonged High-Temperature Annealing in Nitrogen Atmosphere, H. Nakazawa, M. Ogino, H. Teranishi, Y. Takahashi, and H. Habuka, 2013 International Conference on Materials Science and Chemical Engineering, E020, Feb. 20-21, 2013, Singapore.

43

Acetic Acid Adsorption to Water Layer on Silicon Surface, H. Habuka, T. Naito and A. Sakurai, Proceeding of The 6th International Symposium on Advanced Science and Technology of Silicon Materials (JSPS Symposium), pp. 63-66, Nov. 19-23, 2012, Kona, Hawaii, USA.

44

Precipitates Caused in Silicon Crystal by High-Temperature Prolonged Annealing in Nitrogen Atmosphere, H. Nakazawa, M. Ogino, H. Teranishi, Y. Takahashi, and H. Habuka, Proceeding of The 6th International Symposium on Advanced Science and Technology of Silicon Materials (JSPS Symposium), pp. 119-122, Nov. 19-23, 2012, Kona, Hawaii, USA.

45

Amorphous Silicon Carbide Film Formation at Room Temperature by Monomethylsilane Gas, Hitoshi Habuka, Masaki Tsuji and Y. Ando, The 9th European Conference on Silicon Carbide and Related Materials (Saint Petersburg, Russia. Sept. 2 - September 8, 2012), WeP-1.

46

Amorphous Silicon Carbide Thin Film Formation at Room Temperature Using Monomethylsilane Gas, Hitoshi Habuka, Masaki Tsuji, and Yusuke Ando, Materials Research Society, (San Francisco, USA, Apr. 10, 2012) ) H4.1.

47

Water Motion over a Wafer Surface Rotating in a Single-Wafer Wet Cleaner, Hitoshi Habuka, Shintaro Ohashi, Taka-Aki Tsuchimochi, and Tetsuo Kinoshita, Electrochemical Society Transactions (Semiconductor Cleaning Science and Technology 12) (Boston, USA, Oct., 2011)., Vol. 41, No.5, page279-286 (2011)

48

Density of Etch Pits on C-face 4H-SiC Surface Produced by ClF3 Gas , Hitoshi Habuka, Kazuchika Furukawa, Toshimitsu Kanai, and Tomohisa Kato, 14th International Conference on Defects, H-5, (Miyazaki, Japan Sep., 2011)

49

Density of Etch Pits on C-face 4H-SiC Surface Produced by ClF3 Gas, Hitoshi Habuka, Kazuchika Furukawa, Toshimitsu Kanai, and Tomohisa Kato, Int. Conf. Silicon Carbide Related Mat., We-P-45 (Cleveland, Ohio, USA, Sep., 2011).

50

Low Temperature SiC Film Deposition Using Trichlorosilane Gas and Monomethylsilane Gas, Hitoshi Habuka and Yusuke Ando, EuroCVD 18 (Kinsale, Ireland, Sep. 2011).

51

Rate parameters and surface concentration behavior in a three organic compounds system, Hitoshi Habuka, Tatsuhito Naito and Norihiro Kawahara, International Symposium on Contamination Control 2010, G03, P149-153 (Tokyo, Oct. 5-9, 2010).

52

Concentration of Three Organic Compounds Influencing Each Other on Silicon Surface, Hitoshi Habuka, Tatsuhito Naito and Norihiro Kawahara, 10th Itl Symposium on Ultra Clean Processing of Semiconductor Surfaces, P7.1, (19-22 September 2010) (Thermae Palace, Oostend (Belgium).)

53

Etch Pits on 4H-SiC Surface Produced by ClF3 Gas , Hitoshi Habuka, Kazuchika Furukawa , Keiko Tanaka, Yusuke Katsumi, Shinji Iizuka, Katsuya Fukae and Tomohisa Kato, The 8th European Conference on Silicon Carbide and Related Materials (Oslo, Norway. August 29 - September 2, 2010), WeP-1.

54

Etch Pits of 4H-Silicon Carbide Surface Formed Using Chlorine Trifluoride Gas, Hitoshi Habuka, Kazuchika Furukawa, Keiko Tanaka, Yusuke Katsumi, Naoto Takechi, Kastuya Fukae, and Tokmohisa Kato, ECS Transactions, 28 (4) 81-88 (2010), "Wide-Bandgap Semiconductor Materials and Devices 11 - and- State-of-the-ArtProgram on Compound Semiconductor 52 (SOTAPOCS 52), (Apr. 26-27, 2010) Vancouver, Canada.

55

4H-SiC Surface Morphology Etched Using ClF3 Gas, H. Habuka, K. Tanaka, Y. Katsumi, N. Takechi, K. Fukae and T. Kato, International Conference on Silicon Carbide and Related Materials, (Oct. 11-16, 2009)Nurenberg, Germany, WE-P-35.

56

Water and Bubble Motions under Megasonic Wave in a Silicon Wafer Wet Cleaning Bath, H. Habuka, Y. Okada, R. Fukumoto, H. Yoshii, and M. Kato, ECS Transactions,-Vienna, Vol. 25, No. 5, "Cleaning and Surface Conditioning Technology in Semiconductor Devise Manufacturing 11", 265-272 (Oct, 2009).

57

Atmospheric Pressure SiC Film Deposition at Low Temperatures Using SiH3CH3 and HCl Gases, H.i Habuka and H.i Ohmori, ECS Transactions,-Vienna, Vol. 25, No. 8, "EuroCVD17/CVD17", 191-198 (Oct, 2009).

58

Hafnium Oxide Etching Using Hydrogen Chloride Gas, H. Habuka, Y. Kobori, M. Yamaji, S. Horii and Y. Kunii, ECS Transactions-San Francisco, Volume 19, No. 1 "Advanced gate stack. Source drain, and channel engineering for Si-based CMOS5: New materials, processes, and equipment", 289-299 (May 2009)

59

Heat Transport and Temperature Gradient in a Silicon-On-Insulator Wafer during Flash Lamp Annealing Process, H. Habuka, Y. Kasahara and A. Hara, International Symposium on Advanced Science and Technology of Silicon Materials (JSPS Si Symposium, Abstracts), Nov. 10-14, 2008, Kona, Hawaii, USA, L-10, P.280-284

60

Etching Rate Behavior of 4H-Silicon Carbide Using Chlorine Trifluoride Gas, Y. Miura, Y. Katsumi, K. Tanaka, S. Oda, H. Habuka, Y. Gao, Y. Fukai, K. Fukae, T. Kato, H. Okumura and K. Arai, ECS Transactions - Phoenix, AZ" Volume 13 (3), "State-of-the-Art Program on Compound Semiconductors 48 (SOTAPOCS 48)", 39-52 (2008)

61

4H Silicon Carbide Etching Using Chlorine Trifluoride Gas, H. Habuka, Y. Katsumi, Y. Miura, K. Tanaka, Y. Fukai, T. Fukae, Y. Gao, T. Kato, H. Okumura and K. Arai, International Conference on Silicon Carbide and Related Materials 2007, Mo-P-50 (Oct. 14-19, 2007, Otsu, Shiga, Japan)

62

In-Situ Measurement Method and Rate Theory for Clarifying Multi-Component Organic Compounds Adsorption and Desorption on Silicon Surface, H. Habuka and D. Yamaya, Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes (Oct. 7-12,Washington, USA)

63

Polycrystalline Silicon Carbide Film Deposition Using Monomethylsilane and Hydrogen Chloride Gases, H. Habuka, M. Watanabe, M. Nishida and T. Sekiguchi, EuroCVD (Sep. 16-21, 2007 Hague, The Netherlands)

64

Polycrystalline Silicon Carbide Film Deposition Using Monomethylsilane and Hydrogen Chloride Gases, H. Habuka, M. Watanabe, M. Nishida and T. Sekiguchi, State-of-the-Art Program Compound Semiconductors (SOTAPOCS 46), #770, (May 6-10, 2007 Chicago, USA) Electrochem. Trans., 6 (2), 69-81 (2007)

65

Thermodynamic Investigation of Hydrogen Production by Methane Steam Reforming using Integrated Hydrogen-permselective Membrane Reactor with CO2 absorption, M. Aihara, H. Habuka and T. Takeuchi,16th World Hydrogen Energy Conference, (June 13-16, 2006 Lyon France)

66

Technique for Preparing Wettable Polyimide Surface by Using High-concentration Ozone Gas, K. Koike, T. Aida and H. Habuka, Second International Symposium on Standard Materials and Metrology for Nanotechnology, (May 26-27, 2006 Akihabara Tokyo)

67

Small-Batch Reactor Development for Silicon Epitaxial Film Growth Based on Theory of Transport Phenomena, H. Habuka, H. Sakakibara, M. Kawaoka, K. Arimura, L. Scudder and A. Okabe, Fundamental Gas-Phase and Surface Chemistry of Vapor-Phase Materials Processing III,, (May 7-12, 2006), Denver, USA (Refereed), ECS Transactions, 2 (7) 21-32 (2007) , DOI:10.1149/1.2408900

68

Influence of Gas Velocity and Humidity on Diethyl Phthalate Adsorption and Desorption on Silicon Surface, H. Habuka, M. Masaki, K. Suzuki, T. Takeuchi and M. Aihara, Silicon Materials Science and Technology X, (May 7-12, 2006), Denver, USA

69

Measurement of time-dependent organic contamination on silicon surface, H. Habuka, "Crystalline defects and contamination: Their impact and control in device manufacturing IV DECON2005", (Sep. 15-16, 2005 Grenoble France)

70

Air flow in a square quartz plate spin cleaner, H. Habuka, H. Pan, K. Fujita, M. Kato, T. Takeuchi and M. Aihara, "Cleaning Technology in Semiconductor Device Manufacturing IX", (Oct. 2005, Los Angeles)

71

Comparison of methane steam reforming with separation process by exergy analysis, M. Aihara,, Takeuchi, T. Takeuchi and H. Habuka, 7th World Congress of Chemical Engineering(WCCE2005) (Glasgow, Scotland, 2005)

72

Nano-porous structural change of calcium carbonate and calcium oxide as solid reactant for thermal-energy storage and temperature upgrade, M. Aihara, T. Yoshii, T. Takeuchi, H. Habuka, , 7th World Congress of Chemical Engineering(WCCE2005) (Glasgow, Scotland, 2005)

73

CFD-simulation of membrane reactor for methane steam reforming, T. Takeuchi, M. Aihara and H. Habuka, 2004 Annual Meeting of AIChE, 392e (Austin, 2004)

74

Water Flow in a Carrierless Overflow Rinse Bath for 300 mm Silicon Wafers, H. Habuka, S. Kobayashi, M. Kato, T. Takeuchi and M. Aihara, The Fourth International Symposium on Advanced Science and Technology of Silicon Materials, (Hawaii, 2004)

75

Nano-porous structure change of carbonate and oxide as solid reactant for thermal-energy storage and temperature upgrade,M. Aihara, T. Yoshii, Y. Shimazaki, T. Takeuchi and H. Habuka, 10th Asian Pacific Confederation of Chemical Engineering(APCChE 2004), (Kitakyushu, 2004)

76

Basic Concept for Hydrogen-Generation-System from Ocean Current Energy, M. Aihara, K. Okuyama, K. Kamemoto, T. Hirayama, Y. Utaka and H. Tanaka, 15th World Hydrogen Energy Conference, (Yokohama, 2004)

77

Methane Steam Reforming by Hydrogen-permselective Membrane Reactor with a carbon dioxide absorbent, M. Aihara, T. Hibino, T. Takeuchi and H. Habuka, 15th World Hydrogen Energy Conference, (Yokohama, 2004)

78

Formation mechanism of local thickness profile of silicon epitaxial film, H. Habuka, S. Fukaya, A. Sawada, T. Takeuchi and M. Aihara, 4th International Workshop on Modeling in Crystal Growth (IWMCG), (Fukuoka, 2003)

79

Formation mechanism of local thickness profile of silicon epitaxial film, H. Habuka, S. Fukaya, A. Sawada, T. Takeuchi and M. Aihara, CVD XVI and EUROCVD 14(Paris, 2003)

80

Evaluation Technology for Time-Dependent Organic Contamination on Silicon Wafer Surfaces, H. Habuka, S. Ishiwari, and H. Kato, Semiconductor Silicon 2002, pp. 863-874 (Philadelphia, 2002)

81

Rate Theory of Multicomponent Adsorption of Organic Species from Gas Phase on Silicon Wafer Surface, H. Habuka, M. Shimada and K. Okuyama, Proceedings of the 2nd Symposium on Fundamental Gas-Phase and Surface Chemistry of Vapor-Phase Materials Synthesis, pp. 69-75 (Washington DC, May 2001)

82

Rate Theory of Multicomponent Adsorption of Organic Species on Silicon Wafer Surface, H. Habuka, M. Shimada and K. Okuyama, Proceedings of the 3rd International Symposium on Advanced Science and Technology of Silicon Materials. p. 282-288. (Hawaii, Nov. 2000)

83

Dominant Chemical Reaction and Chemical Species for Silicon Epitaxial Growth in a SiHCl3-H2 System at Atmospheric Pressure in a Horizontal Cold-Wall Reactor, H. Habuka, S. Akiyama, T. Otsuka, M. Shimada and K. Okuyama, Proceedings of the Symposium on Fundamental Gas-Phase and Surface Chemistry of Vapor-Phase Materials Synthesis, Editors: M. D. Allendorf, M. R. Zachariah, L. Mountziaris and A. H. McDaniel, p. 239-245, .The Electrochemical Society, PV 98-23 (1999)

84

Method for Cleaning the Surface of a Silicon Substrate using Hydrogen Fluoride Gas and Hydrogen Chloride Gas in Hydrogen Ambient Hitoshi Habuka, Tohru Otsuka and Masatake Katayama, Semiconductor Silicon 1998, Editor: H. R. Huff, U. Goesele and H. Tsuya, Electrochemical Society Proceedings Vol. 98-1, p. 834-843, (San Diego, 1998)

85

Dielectric Behavior of Copolymers of Vinylidene Fluoride and Trifluoroethylene, N. Koizumi, H. Habuka and N. Haikawa, Proc. IUPAC, I. U. P. A. C., Macromol. Symp., 28th, Page 423 (1982)